Method of forming amorphous TiN by thermal chemical vapor...

Details Method of forming amorphous TiN by thermal chemical vapor... Method of forming amorphous TiN by thermal chemical vapor...

2005-06-03

2010-06-08

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S680000, C257S915000, C257SE21170

Reexamination Certificate

active

07732307

ABSTRACT:
A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH3on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01<Si<0.5 at %).

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Reid et al., Ti-Si-N. Diffusion Barriers Between Silicon and Copper, IEEE Electron Device Letters, vol. 15, No. 8, Aug. 1994, pp. 298-300.

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