Method of forming amorphous silica-based coating film with...

Details Method of forming amorphous silica-based coating film with... Method of forming amorphous silica-based coating film with...

2007-06-19

2007-06-19

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S780000, C438S781000, C257SE21530

Reexamination Certificate

active

10533238

ABSTRACT:
The present invention relates to an amorphous silica-based coating film with a low specific dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of forming the same. A liquid composition containing a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH) is prepared. The liquid composition is then applied on a substrate, heated and cured to obtain a coating film. The coating film obtained as described has a smooth surface and also has specific micropores therein.

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