Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-26
2011-07-26
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21006
Reexamination Certificate
active
07985680
ABSTRACT:
A method for forming an aluminum-doped metal (tantalum or titanium) carbonitride gate electrode for a semiconductor device is described. The method includes providing a substrate containing a dielectric layer thereon, and forming the gate electrode on the dielectric layer in the absence of plasma. The gate electrode is formed by depositing a metal carbonitride film, and adsorbing an atomic layer of an aluminum precursor on the metal carbonitride film. The steps of depositing and adsorbing may be repeated a desired number of times until the aluminum-doped metal carbonitride gate electrode has a desired thickness.
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United States Patent and Trademark
Hasegawa Toshio
Leusink Gerrit J
Coleman W. David
Tokyo Electron Limited
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