Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-04
2006-07-04
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S619000, C438S421000, C438S422000
Reexamination Certificate
active
07071091
ABSTRACT:
A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air gaps are formed, in part, by depositing a sacrificial material within a trench and/or via that have been formed in a dielectric layer, and the sacrificial material is ultimately removed after metal deposition to create the air gaps. A porous dielectric cap may be deposited over the dielectric layer, and the sacrificial material may be removed through this porous dielectric layer. Other embodiments are described and claimed.
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Clarke James S.
Goodner Michael D.
Intel Corporation
Nguyen Thanh
Tweet Kerry D.
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