Method of forming air gaps for reducing interconnect capacitance

Details Method of forming air gaps for reducing interconnect capacitance Method of forming air gaps for reducing interconnect capacitance

1997-11-26

2000-10-24

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438619, 438421, 438669, H01L 214763

Patent

active

061366870

ABSTRACT:
A method for manufacturing integrated circuits increases the aspect ratio of the electrical conductor members connected to the circuits by increasing the effective height of the conductors, either by forming a thicker layer of conductor material prior to patterning the conductor members, or by adding a capping dielectric layer to the conductor material prior to patterning, or by overetching the dielectric material underlying the conductor members.
The structure is then covered by a dielectric layer having poor step coverage, resulting in a number of voids and open spaces in the dielectric layer to thereby reduce the dielectric constant between the patterned conductors. A plasma etchback of the dielectric layer is employed to open and shape additional voids and open spaces in the dielectric layer. This is followed by the deposition of a second layer of dielectric material to seal the structure, including any open spaces in the first layer of dielectric material.

REFERENCES:
patent: 4502210 (1985-03-01), Okumura et al.
patent: 4801560 (1989-01-01), Wood et al.
patent: 4986878 (1991-01-01), Malazgirt et al.
patent: 5119164 (1992-06-01), Sliwa, Jr. et al.
patent: 5217926 (1993-06-01), Langley
patent: 5278103 (1994-01-01), Mallon et al.
patent: 5310700 (1994-05-01), Lien et al.
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5559055 (1996-09-01), Chang et al.
patent: 5641712 (1997-06-01), Grivna et al.
patent: 5668398 (1997-09-01), Havemann
patent: 5716888 (1998-02-01), Lur et al.
patent: 5789314 (1998-08-01), Yen
patent: 5960311 (1999-09-01), Singh et al.
Fleming, J. et al., "Use of Air Gap Structures to Lower Intralevel Capacitance" DUMIC Conference (1997).

Affiliated with

Also associated with

Rating

Method of forming air gaps for reducing interconnect capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming air gaps for reducing interconnect capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming air gaps for reducing interconnect capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1963293