Method of forming a via with plasma treatment of SOG

Details Method of forming a via with plasma treatment of SOG Method of forming a via with plasma treatment of SOG

1998-07-10

2000-06-13

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438626, 438637, 438672, 438782, H01L 214763

Patent

active

060749415

ABSTRACT:
A method of forming a via is provided comprising a plasma treatment at the spin-on-glass layer after forming the unlanding via. The plasma comprises hydrogen and a second gas. The mist containing in the spin-on-glass layer is damaged and removed away.

REFERENCES:
patent: 5883014 (1999-03-01), Chen et al.

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