Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-08-01
2006-08-01
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S753000, C438S756000
Reexamination Certificate
active
07084073
ABSTRACT:
A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer, forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole, eliminating any remaining patterning material used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole is etched to form a via hole having a smooth surface and extending through the glass wafer, and eliminating the material layer. The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.
REFERENCES:
patent: 6338284 (2002-01-01), Najafi et al.
patent: 6380095 (2002-04-01), Liu et al.
patent: 6471883 (2002-10-01), Fell et al.
patent: 6576150 (2003-06-01), Weigert
patent: 6618200 (2003-09-01), Shimizu et al.
patent: 6690032 (2004-02-01), Umetsu
patent: 6852560 (2005-02-01), Corso
patent: 2004/0152229 (2004-08-01), Najafi et al.
patent: 2001-341214 (2001-12-01), None
Belloy, et al, “Micromachining of Glass Inertial Sensors”, J. Microelectromechanical Systems, 11(1):85-90 (Feb 2002).
Diepold et al, “Smoothing of Ultrasonically Drilled Holes in Borosilicate Glass by Wet Chemical Etching”, J. Micromechanics and Microengineering, 6(1):29-32 (Mar. 1996).
Gretillat et al, “A New Fabrication Method for Borosilicate Glass Capillary Tubes With Lateral Inlets and Outlets”, Sensors & Actuators A, 60(1-3):219-222 (May 1997).
Oberhammer et al, “Incremenally Etched Electrical Feedthroughs for Wafer-Level Transfer of Glass Lid Packages”, Transducers, Solid-State Sensors, Actuators and Microsystems, 12th International Conference, vol. 2, pp. 1832-1835, (Jun. 2003).
Schlautmann et al, “Powder-Blasting Technology as an Alternative Tool for Microfabrication of Capillary Electrophoresis Chips with Integrated Conductivity Sensors”, J. Micromechanics and Microengineering, 11(4):386-389, (Oct. 2001).
Wensink et al. “Fine Tuning the Roughness of Powder Blasted Surfaces”, J. Micromechanics and Microengineering, 12(5):616-620 (Sep. 2002).
Choi Hyung
Chung Seok-whan
Hong Seog-woo
Jang Mi
Jun Chan-bong
Chen Kin-Chan
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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