Method of forming a via hole structure including CVD tungsten si

Details Method of forming a via hole structure including CVD tungsten si Method of forming a via hole structure including CVD tungsten si

1997-06-25

1999-11-16

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438627, 438639, 438649, H01L 2128

Patent

active

059857498

ABSTRACT:
The invention relates to integrated circuits and to via hole structures which include a tungsten silicide barrier layer and to methods of forming such via hole structures. In an exemplary embodiment, a metal layer is formed on a sidewall and a bottom surface of the via hole, a WSi.sub.x barrier layer is formed on the first metal layer by chemical vapor deposition and the via hole is subsequently filled with a metal. The tungsten silicide barrier layer effectively suppresses device degradation resulting from the release of gaseous species from the sidewall of the via hole during plug formation. Semiconductor devices can thus be fabricated which are immune or less susceptible to metal open failures due to incomplete via filling.

REFERENCES:
patent: 5268329 (1993-12-01), Chittipeddi et al.
patent: 5371041 (1994-12-01), Liou et al.
patent: 5529955 (1996-06-01), Hibino et al.
patent: 5604158 (1997-02-01), Cadien et al.
Chen, J.R., et al., "Growth of tungsten silicide films by low pressure CVD method," Vacuum, vol. 37, Nos. 3/44, 1987, pp. 357-361.
Wolf, S., Silicon Processing for the VLSi Era, Lattice Press, vol. 2, 1990, pp. 189-194, 229-236.

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