Method of forming a via hole of a semiconductor device with spin

Details Method of forming a via hole of a semiconductor device with spin Method of forming a via hole of a semiconductor device with spin

1996-06-24

1997-12-30

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566531, 437195, 437228, 437231, 437238, H01L 21306

Patent

active

057025681

ABSTRACT:
The present invention discloses a method of forming a via hole of a semiconductor device, which includes the steps of: forming a plurality of first metal wires on a wafer; after coating a SOG film on the first oxide film, forming a groove in the SOG film using a mask in which a via hole contact is formed, the size of which is bigger than that of the real via hole to be formed in it; performing a process of filling up completely the groove portion (a two-step process for the first embodiment or a one-step process for the second embodiment); and forming a via hole using a contact mask the size of which is the same as that of the real via hole.

REFERENCES:
patent: 5364818 (1994-11-01), Ouellet
patent: 5422312 (1995-06-01), Lee et al.
patent: 5437763 (1995-08-01), Huang
patent: 5506177 (1996-04-01), Kishimoto et al.
Wolf et al Silicon Processing for the VLSI Era, vol. 2 Process Integration, pp. 229-236, 1986.

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