Method of forming a via-hole having a desired slope in a photore

Details Method of forming a via-hole having a desired slope in a photore Method of forming a via-hole having a desired slope in a photore

1987-09-22

1989-03-21

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156653, 156657, 1566591, 430316, 430317, 430323, 437947, 437981, H01L 21308

Patent

active

048140414

ABSTRACT:
In a dry etching equipment, a variable gas mixture composition provides etch and ash simultaneously. For example, when a SiO.sub.2 /phospho silicate glass composite insulating layer with a respective thickness of about 300 and 600 nm masked by a patterned photoresist layer is to be etched, a CHF.sub.3 /O.sub.2 gas mixture may be used with the following steps:

REFERENCES:
patent: 4461672 (1984-07-01), Musser
patent: 4487652 (1984-12-01), Almgren
patent: 4522681 (1985-06-01), Gorowitz et al.
patent: 4631248 (1986-12-01), Pasch
patent: 4676869 (1987-06-01), Lee et al.
Ashby, "Doping Level Selective Photochemical Dry Etching of GaAs", Appl. Phys. Lett. 46(8) 752-54.
Ashby et al, "Composition-Selective Photochemical Etching of Compound Semiconductors", Appl. Phys. Lett. 47(1) 62-63.
IBM Technical Disclosure Bulletin, vol. 27, No. 6, Nov. 1984, pp. 3259-3260.
IBM Technical Disclosure Bulletin, vol. 28, No. 7, Dec. 1985, pp. 3136-3137.

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