Method of forming a tunneling magnetoresistive head

Details Method of forming a tunneling magnetoresistive head Method of forming a tunneling magnetoresistive head

2006-08-29

2006-08-29

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192320, C427S523000, C427S524000, C427S529000, C216S066000

Reexamination Certificate

active

07097745

ABSTRACT:
A method of forming a tunneling magnetoresistive head begins by forming a tunneling magnetoresistive stack having a tunnel barrier. An air bearing surface is formed of the tunneling magnetoresistive stack. The air bearing surface is ion etched causing a deficiency of a constituent in a portion of the tunnel barrier adjacent the air bearing surface. The deficiency of the constituent is replenished in the portion of the tunnel barrier adjacent the air bearing surface to restore the electrical properties of the tunnel barrier.

REFERENCES:
patent: 4130847 (1978-12-01), Head et al.
patent: 4412902 (1983-11-01), Michikami et al.
patent: 4647494 (1987-03-01), Meyerson et al.
patent: 5159508 (1992-10-01), Grill et al.
patent: 5175658 (1992-12-01), Chang et al.
patent: 5271802 (1993-12-01), Chang et al.
patent: 5466495 (1995-11-01), Pronk et al.
patent: 5858182 (1999-01-01), Horng et al.
patent: 6136421 (2000-10-01), Chen
patent: 6174736 (2001-01-01), Tsukamoto et al.
patent: 6335081 (2002-01-01), Araki et al.
patent: 6359289 (2002-03-01), Parkin
patent: 6368425 (2002-04-01), Segar et al.
patent: 6391419 (2002-05-01), Katayama et al.
patent: 2002/0036876 (2002-03-01), Kawawake et al.
patent: 2003/0034324 (2003-02-01), Ueda et al.
patent: 2004/0180608 (2004-09-01), Church et al.

Affiliated with

Also associated with

Rating

Method of forming a tunneling magnetoresistive head does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a tunneling magnetoresistive head, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a tunneling magnetoresistive head will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3665313