Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1995-08-24
1998-09-08
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438253, 438655, H01L 2120, H01L 218242
Patent
active
058044884
ABSTRACT:
A method for making a polycide-to-polysilicon capacitor having an improved breakdown voltage is described. A first layer of doped polysilicon is formed over a silicon substrate. A silicide layer is formed over the first layer of doped polysilicon. An oxide layer is formed over the silicide layer, and the silicide layer is then annealed. A second layer of doped polysilicon is formed over the oxide layer. The second layer of doped polysilicon is patterned to form a top plate of the capacitor. The oxide layer is removed except under the top plate of the capacitor, where it acts as a capacitor dielectric. The first layer of doped polysilicon and the silicide layer are patterned to form a polycide bottom plate of the capacitor.
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Hsu Shun-Liang
Shih Chun-Yi
Ting Jyh-Kang
Ackerman Stephen B.
Bowers Jr. Charles L.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
Thomas Toniae M.
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