Method of forming a tungsten plug in a semiconductor device

Details Method of forming a tungsten plug in a semiconductor device Method of forming a tungsten plug in a semiconductor device

1996-02-23

1997-09-16

Breneman, R. Bruce

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438675, 438685, H01L 2160

Patent

active

056680643

ABSTRACT:
The present invention discloses a method of forming a tungsten plug within a via hole in which it sequentially forms a barrier metal layer and a tungsten layer on a insulating film including the via hole, forms a photoresist pattern of which size is enough to cover the via hole on the tungsten layer in the upper side of the via hole, etching the tungsten layer by sequentially performing an isotropic etching process and an anisotropic etching process using the photoresist pattern as an etching mask and, after the photoresist pattern is removed, etching the projections of the tungsten layer by performing the anisotropic etching process.

REFERENCES:
patent: 5231051 (1993-07-01), Baldi et al.
patent: 5289035 (1994-02-01), Bost et al.
patent: 5374591 (1994-12-01), Hasegawa et al.
"Tungsten Plug Formation By An Optimized Tungsten Etch Back Process in Non-Fully Planarized Topology"; Appl. Surf. Sci. (Netherlands); vol. 53; 1991; Abstract Only; Koller et al.

Affiliated with

Also associated with

Rating

Method of forming a tungsten plug in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a tungsten plug in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a tungsten plug in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-217904