Method of forming a tungsten-plug contact for a semiconductor de

Details Method of forming a tungsten-plug contact for a semiconductor de Method of forming a tungsten-plug contact for a semiconductor de

1997-05-01

2000-02-01

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, 438655, 438656, H01L 21441

Patent

active

060202599

ABSTRACT:
A method for forming a tungsten plug is disclosed herein. A TiSi.sub.2 layer is selectively formed in a contact hole by using chemical vapor deposition. Then, a TiN layer is formed on the surface of the contact hole and on the TiSi.sub.2 layer. Next, a tungsten layer is formed on the TiN layer and in the contact hole. A CMP is used to remove a portion of the tungsten layer and TiN layer for planarization.

REFERENCES:
patent: 5240739 (1993-08-01), Doan et al.
patent: 5525543 (1996-06-01), Chen
patent: 5595784 (1997-01-01), Kaim et al.
patent: 5831335 (1998-11-01), Miyamoto
D. Maury, et al. "Selective Titanium Silicide for Industrial Applications" Silicide Thin Films-Symposium Mater. Res. Soc. pp. 283-294, 1996.
R.C. Ellwanger, et al. "An Integrated Aluminum/CVD-W Metallization Process for Sub-Micron Contact Filling" Proc. 8th International IEEE VLSI Multilevel Interconnect Conf. (Santa Clara, Calif.) pp. 41-50, Jun. 1991.

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