Method of forming a tungsten plug

Details Method of forming a tungsten plug Method of forming a tungsten plug

1999-04-19

2000-10-31

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438627, 438628, 438637, 438648, 438643, 438685, H01L 214763, H01L 2144

Patent

active

061402249

ABSTRACT:
A dielectric layer and a polishing stop layer are respectively formed over a substrate. A glue layer composed of titanium (Ti) is formed along the surface of the dielectric layer. The Ti layer serves as adhension promotion to the subsequent TiN layer. A titanium-nitride (TiN) layer is next formed on the Ti layer to act as a barrier layer. A tungsten layer is deposited on the TiN layer. An etching back step is carried to etch the tungsten layer, therby leaving the tungsten in the contact holes to form the tungsten plug. Non-metal or oxide CMP is used to removes tungsten residues and TiN/Ti layers and the CMP will stop on the polishing stop layer.

REFERENCES:
patent: 5506177 (1996-04-01), Kishimoto et al.
patent: 5744394 (1998-04-01), Iguchi et al.
patent: 5882999 (1999-03-01), Anderson et al.
patent: 5953635 (1999-09-01), Andideh
patent: 5960317 (1999-09-01), Jeong
patent: 6008114 (1999-12-01), Li
patent: 6010962 (2000-01-01), Liu et al.

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