Method of forming a tungsten layer with N2 plasma treatment

Details Method of forming a tungsten layer with N2 plasma treatment Method of forming a tungsten layer with N2 plasma treatment

1998-02-26

1999-12-21

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

H01L 214763

Patent

active

060048778

ABSTRACT:
A titanium layer is formed on a dielectric layer. A TiN layer is formed on the titanium layer to act as a barrier layer. A rapid thermal annealing is performed. A tungsten layer is deposited by useing chemical vapor deposition with N.sub.2 plasma treatment. In a preferred embodiment, the temperature of the deposition ranges from 300 to 500 degrees centigrade. The gas pressure of the process is about 2 to 4 torr. The power of the plasma is about 300 to 800 Further, the treatment time of the N.sub.2 plasma ranges from 50 to 150 seconds. An etching back step is carried to etch a portion of the tuugsten layer.

REFERENCES:
patent: 5827777 (1996-09-01), Schinella et al.
patent: 5892285 (1997-02-01), Gonzalet et al.

Affiliated with

Also associated with

Rating

Method of forming a tungsten layer with N2 plasma treatment does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a tungsten layer with N2 plasma treatment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a tungsten layer with N2 plasma treatment will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-504609