Method of forming a truck MOS gate or a power semiconductor devi

Details Method of forming a truck MOS gate or a power semiconductor devi Method of forming a truck MOS gate or a power semiconductor devi

1995-02-02

1998-07-21

Dutton, Brian

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438386, 438404, H01L 2120, H01L 2176, H01L 21311

Patent

active

057834911

ABSTRACT:
A method of fabricating a semiconductor device which includes the steps of forming a trench (4), and repeating the formation and removal of an oxide film (a sacrificial oxide film) twice to provide a rounded configuration (5b) of an opening portion of the trench (4) and a rounded configuration (6b) of a bottom thereof and to draw defects in a semiconductor layer into a silicon oxide film (8), reducing the defects adjacent the inner wall of the trench (4), whereby electric field concentration on a gate is prevented and the mobility of carriers in channels is improved for an improvement in characteristic, particularly an on-state voltage, of a power device.

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