Method of forming a trench for use in manufacturing a...

Details Method of forming a trench for use in manufacturing a... Method of forming a trench for use in manufacturing a...

2007-02-27

2007-02-27

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S638000, C438S675000, C438S756000, C438S757000, C257SE21229

Reexamination Certificate

active

10673873

ABSTRACT:
A method for use in manufacturing a semiconductor device includes forming a photoresist pattern on a substrate, performing first etching process in which an initial trench is formed using the photoresist pattern as a mask, and performing second distinct etching process to enlarge the initial trench. Thus, the initial trench can be formed using the photoresist pattern having a stable structure. Thereafter, the trench is enlarged using an etching solution having a composition based on the material in which the initial trench is formed, e.g., a silicon substrate or an insulation film. Therefore, a metal wiring, an isolation film or a contact can be formed in the enlarged trench to desired dimensions.

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