Method of forming a transistor having thin doped semiconductor g

Details Method of forming a transistor having thin doped semiconductor g Method of forming a transistor having thin doped semiconductor g

1999-01-05

2000-07-11

Fourson, George

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438561, 438563, 438564, 438592, H01L 213205

Patent

active

060872489

ABSTRACT:
A method of forming a transistor is disclosed that comprises the step forming a gate insulator layer 12 on an outer surface of the substrate 10. A first gate conductor layer 22 is formed outwardly from the gate insulator layer 12. The first gate conductor layer 22 is extremely thin. Dopants are introduced into the layer 22 to render it conductive by using a diffusion source layer 24. The diffusion source layer 24 is then removed and replaced by a second gate conductor layer 26 having low resistance. The layer 26 can be used to form a T-gate structure 28, a flush gate 30, or a conventional gate structure.

REFERENCES:
patent: 5281552 (1994-01-01), King et al.
patent: 5541121 (1996-07-01), Johnson
patent: 5798295 (1998-08-01), Hoover et al.
patent: 5837601 (1998-11-01), Matsumoto
patent: 5856225 (1999-01-01), Lee et al.

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