Method of forming a transistor having gate protection and...

Details Method of forming a transistor having gate protection and... Method of forming a transistor having gate protection and...

2008-12-16

2010-10-05

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S595000, C257SE29125

Reexamination Certificate

active

07808058

ABSTRACT:
A microelectronic device and a method of forming same. The method comprises: a transistor gate; a first spacer and a second spacer respectively adjacent a first side and a second side of the gate; a diffusion layer supra-adjacent the gate; contact regions super-adjacent the diffusion layer and adjacent the first spacer and the second spacer; a protective cap super-adjacent the gate and between the contact regions, the protective cap being adapted to protect the device from shorts between the gate and the contact regions.

REFERENCES:
patent: 6207514 (2001-03-01), Furukawa et al.
Office Action dated Jan. 5, 2010, Chinese Patent Application No. 200780019516.9, 7 pages.

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