Method of forming a transistor having gate and body in...

Details Method of forming a transistor having gate and body in... Method of forming a transistor having gate and body in...

2007-03-08

2010-02-09

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C257S330000, C257SE29263

Reexamination Certificate

active

07659155

ABSTRACT:
A transistor having a directly contacting gate and body and related methods are disclosed. In one embodiment, the transistor includes a gate; a body; and a dielectric layer extending over the body to insulate the gate from the body along an entire surface of the body except along a portion of at least a sidewall of the body, wherein the gate is in direct contact with the body at the portion. One method may include providing the body; forming a sacrificial layer that contacts at least a portion of a sidewall of the body; forming a dielectric layer about the body except at the at least a portion; removing the sacrificial layer; and forming the gate about the body such that the gate contacts the at least a portion of the sidewall of the body.

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U.S. Appl. No. 11/935,612, Office Action dated Jun. 25, 2009.

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