Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-12
2011-07-12
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S664000, C438S682000, C257SE21199
Reexamination Certificate
active
07977236
ABSTRACT:
Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
REFERENCES:
patent: 3731287 (1973-05-01), Seely et al.
patent: 3732287 (1973-05-01), Himmele et al.
patent: 4234362 (1980-11-01), Riseman
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4432132 (1984-02-01), Kinsbron et al.
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4508579 (1985-04-01), Goth et al.
patent: 4570325 (1986-02-01), Higuchi
patent: 4648937 (1987-03-01), Ogura et al.
patent: 4716131 (1987-12-01), Okazawa et al.
patent: 4776922 (1988-10-01), Bhattacharyya et al.
patent: 4838991 (1989-06-01), Cote et al.
patent: 4903344 (1990-02-01), Inoue
patent: 4983544 (1991-01-01), Lu et al.
patent: 5013680 (1991-05-01), Lowrey et al.
patent: 5024959 (1991-06-01), Pfiester
patent: 5047117 (1991-09-01), Roberts
patent: 5053105 (1991-10-01), Fox, III
patent: 5064683 (1991-11-01), Poon et al.
patent: 5117027 (1992-05-01), Bernhardt et al.
patent: 5122848 (1992-06-01), Lee et al.
patent: 5177027 (1993-01-01), Lowrey et al.
patent: 5250450 (1993-10-01), Lee et al.
patent: 5295092 (1994-03-01), Hotta
patent: 5305252 (1994-04-01), Saeki
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 5330879 (1994-07-01), Dennison
patent: 5391901 (1995-02-01), Tanabe
patent: 5514885 (1996-05-01), Myrick
patent: 5539229 (1996-07-01), Noble et al.
patent: 5569620 (1996-10-01), Linn et al.
patent: 5596759 (1997-01-01), Miller et al.
patent: 5604159 (1997-02-01), Cooper et al.
patent: 5638318 (1997-06-01), Seyyedy
patent: 5645887 (1997-07-01), Byun
patent: 5670794 (1997-09-01), Manning
patent: 5677865 (1997-10-01), Seyyedy
patent: 5680344 (1997-10-01), Seyyedy
patent: 5700733 (1997-12-01), Manning
patent: 5748519 (1998-05-01), Tehrani et al.
patent: 5753546 (1998-05-01), Koh et al.
patent: 5756395 (1998-05-01), Rostoker et al.
patent: 5780349 (1998-07-01), Naem
patent: 5789269 (1998-08-01), Mehta et al.
patent: 5789320 (1998-08-01), Andricacos et al.
patent: 5795830 (1998-08-01), Cronin et al.
patent: 5798544 (1998-08-01), Ohya et al.
patent: 5804458 (1998-09-01), Tehrani et al.
patent: 5841611 (1998-11-01), Sakakima et al.
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5892708 (1999-04-01), Pohm
patent: 5895238 (1999-04-01), Mitani
patent: 5902690 (1999-05-01), Tracy et al.
patent: 5909618 (1999-06-01), Forbes et al.
patent: 5913116 (1999-06-01), Gardner et al.
patent: 5917749 (1999-06-01), Che et al.
patent: 5956267 (1999-09-01), Hurst et al.
patent: 5963469 (1999-10-01), Forbes
patent: 5963803 (1999-10-01), Dawson et al.
patent: 5977579 (1999-11-01), Noble
patent: 5994743 (1999-11-01), Masuoka
patent: 5998256 (1999-12-01), Juengling
patent: 6004862 (1999-12-01), Kim et al.
patent: 6005798 (1999-12-01), Sakakima et al.
patent: 6005800 (1999-12-01), Koch et al.
patent: 6010946 (2000-01-01), Hisamune et al.
patent: 6042998 (2000-03-01), Brueck et al.
patent: 6057573 (2000-05-01), Kirsch et al.
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6066191 (2000-05-01), Tanaka et al.
patent: 6071789 (2000-06-01), Yang et al.
patent: 6097065 (2000-08-01), Forbes et al.
patent: 6104068 (2000-08-01), Forbes
patent: 6104633 (2000-08-01), Abraham et al.
patent: 6111782 (2000-08-01), Sakakima et al.
patent: 6134139 (2000-10-01), Bhattacharyya et al.
patent: 6141204 (2000-10-01), Schuegraf et al.
patent: 6147405 (2000-11-01), Hu
patent: 6150211 (2000-11-01), Zahurak
patent: 6150687 (2000-11-01), Noble et al.
patent: 6157064 (2000-12-01), Huang
patent: 6165833 (2000-12-01), Parekh et al.
patent: 6175146 (2001-01-01), Lane et al.
patent: 6191470 (2001-02-01), Forbes et al.
patent: 6211044 (2001-04-01), Xiang et al.
patent: 6236590 (2001-05-01), Bhattacharyya et al.
patent: 6251711 (2001-06-01), Fang et al.
patent: 6271080 (2001-08-01), Mandelman et al.
patent: 6274905 (2001-08-01), Mo
patent: 6282113 (2001-08-01), DeBrosse
patent: 6288454 (2001-09-01), Allman
patent: 6291334 (2001-09-01), Somekh
patent: 6297554 (2001-10-01), Lin
patent: 6320222 (2001-11-01), Forbes et al.
patent: 6348380 (2002-02-01), Weimer et al.
patent: 6350635 (2002-02-01), Noble et al.
patent: 6355961 (2002-03-01), Forbes
patent: 6362057 (2002-03-01), Taylor et al.
patent: 6368950 (2002-04-01), Xiang et al.
patent: 6376317 (2002-04-01), Forbes et al.
patent: 6377070 (2002-04-01), Forbes
patent: 6383907 (2002-05-01), Hasegawa et al.
patent: 6395597 (2002-05-01), Noble
patent: 6395613 (2002-05-01), Juengling
patent: 6396096 (2002-05-01), Park et al.
patent: 6399979 (2002-06-01), Noble et al.
patent: 6404056 (2002-06-01), Kuge et al.
patent: 6413825 (2002-07-01), Forbes
patent: 6414356 (2002-07-01), Forbes et al.
patent: 6423474 (2002-07-01), Holscher
patent: 6424001 (2002-07-01), Forbes et al.
patent: 6424561 (2002-07-01), Li et al.
patent: 6448601 (2002-09-01), Forbes et al.
patent: 6455372 (2002-09-01), Weimer
patent: 6461957 (2002-10-01), Yokoyama et al.
patent: 6465298 (2002-10-01), Forbes et al.
patent: 6465309 (2002-10-01), Xiang et al.
patent: 6475867 (2002-11-01), Hui et al.
patent: 6475874 (2002-11-01), Xiang et al.
patent: 6496034 (2002-12-01), Forbes et al.
patent: 6498062 (2002-12-01), Durcan et al.
patent: 6504201 (2003-01-01), Noble et al.
patent: 6514884 (2003-02-01), Maeda
patent: 6522584 (2003-02-01), Chen et al.
patent: 6531727 (2003-03-01), Forbes et al.
patent: 6534243 (2003-03-01), Templeton
patent: 6545904 (2003-04-01), Tran
patent: 6548396 (2003-04-01), Naik et al.
patent: 6559017 (2003-05-01), Brown et al.
patent: 6559491 (2003-05-01), Forbes et al.
patent: 6566280 (2003-05-01), Meagley et al.
patent: 6566682 (2003-05-01), Forbes
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6602779 (2003-08-01), Li et al.
patent: 6632741 (2003-10-01), Clevenger et al.
patent: 6638441 (2003-10-01), Chang et al.
patent: 6639268 (2003-10-01), Forbes et al.
patent: 6646303 (2003-11-01), Satoh et al.
patent: 6660591 (2003-12-01), Peake et al.
patent: 6664806 (2003-12-01), Forbes et al.
patent: 6667237 (2003-12-01), Metzler
patent: 6673684 (2004-01-01), Huang et al.
patent: 6677230 (2004-01-01), Yokoyama et al.
patent: 6686245 (2004-02-01), Mathew et al.
patent: 6686274 (2004-02-01), Shimazu et al.
patent: 6689660 (2004-02-01), Noble et al.
patent: 6689695 (2004-02-01), Lui et al.
patent: 6696746 (2004-02-01), Farrar et al.
patent: 6699763 (2004-03-01), Grider et al.
patent: 6706571 (2004-03-01), Yu et al.
patent: 6709807 (2004-03-01), Hallock et al.
patent: 6710402 (2004-03-01), Harada
patent: 6734107 (2004-05-01), Lai et al.
patent: 6736311 (2004-05-01), Hagglund et al.
patent: 6740594 (2004-05-01), Lu et al.
patent: 6744094 (2004-06-01), Forbes
patent: 6759180 (2004-07-01), Lee et al.
patent: 6768663 (2004-07-01), Ogata
patent: 6773998 (2004-08-01), Fisher et al.
patent: 6777725 (2004-08-01), Willer et al.
patent: 6794699 (2004-09-01), Bissey et al.
patent: 6794710 (2004-09-01), Chang et al.
patent: 6800930 (2004-10-01), Jackson et al.
patent: 6801056 (2004-10-01), Forbes
patent: 6825129 (2004-11-01), Hong
patent: 6825529 (2004-11-01), Chidambarrao et al.
patent: 6844591 (2005-01-01), Tran
patent: 6867116 (2005-03-01), Chung
patent: 6875703 (2005-04-01), Furukawa et al.
patent: 6893972 (2005-05-01), Rottstegge et al.
patent: 6900521 (2005-05-01), Forbes et al.
patent: 6908800 (2005-06-01), Kim et al.
patent: 6924191 (2005-08-01), Liu et al.
patent: 6936383 (2005-08-01), Mazur et al.
patent: 6946389 (2005-09-01), Farrar et al.
patent: 6946709 (2005-09-01), Yang
patent: 6955961 (2005-10-01), Chung
patent: 6960832 (2005-11-01), Shimazu
patent: 6962867 (2005-11-01), Jackson et al.
patent
Figura Thomas A.
Haller Gordon A.
Harnish Justin
Iyer Ravi
Meldrim John Mark
Micro)n Technology, Inc.
Stark Jarrett J
Wells St. John PS
LandOfFree
Method of forming a transistor gate of a recessed access... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a transistor gate of a recessed access..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a transistor gate of a recessed access... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2655431