Method of forming a top gate thin film transistor

Details Method of forming a top gate thin film transistor Method of forming a top gate thin film transistor

2006-08-08

2006-08-08

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S312000

Reexamination Certificate

active

07087363

ABSTRACT:
A method of forming a top gate thin film transistor (TFT). By performing photolithography using a first reticle, a photoresist layer having a thick photoresist layer portion and a thin photoresist layer portion is formed on a silicon layer in an active area. Thus, a channel layer and source/drain regions in a silicon island are defined by the same patterning process. In addition, a gate and an LDD region in the silicon island are defined by photolithography using a second reticle and a backside exposure process. Accordingly, the top gate TFT fabrication process of the present invention requires only two reticles, and thereby reduces costs.

REFERENCES:
patent: 5994721 (1999-11-01), Zhong et al.
patent: 6031512 (2000-02-01), Kadota et al.
patent: 6162654 (2000-12-01), Kawabe
patent: 55-58534 (1980-05-01), None

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