Method of forming a through substrate via in a compound...

Details Method of forming a through substrate via in a compound... Method of forming a through substrate via in a compound...

2009-02-11

2011-10-25

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23011, C257SE21158

Reexamination Certificate

active

08043965

ABSTRACT:
A method is provided for forming a through substrate via in a compound semiconductor having a transistor on a front side of the substrate. The method comprises forming a protective stop pad over a contact area on the front side of the substrate, forming a contact pad overlying the protective stop pad, such that the contact pad is in contact with a terminal of the transistor and plasma etching a backside of the substrate to form a contact coupling via to the protective stop pad. The method further comprises performing a chemical wet etch to remove the protective stop pad and depositing a conductive contact layer in the contact coupling via to provide a conductive contact to the contact pad.

REFERENCES:
patent: 5614743 (1997-03-01), Mochizuki
patent: 5949140 (1999-09-01), Nishi et al.
patent: 7241679 (2007-07-01), Kameyama et al.
patent: 2009/0072272 (2009-03-01), Suh et al.
patent: 2009/0121314 (2009-05-01), Bosholm et al.
patent: 2005072378 (2005-03-01), None

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