Method of forming a thin film transistor with asymmetrically arr

Details Method of forming a thin film transistor with asymmetrically arr Method of forming a thin film transistor with asymmetrically arr

1999-05-05

2000-03-07

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

257 66, 257510, 257 57, 257 58, 257 61, 438106, 438151, 438163, 438175, 438180, H01L 2976, H01L 31036

Patent

active

060339411

ABSTRACT:
A thin film transistor which includes an oxide layer containing a trench; a semiconductor layer formed on the oxide layer, including the trench; a buffer layer formed on the semiconductor layer in the trench; a gate electrode aligned on the semiconductor layer on one side of the trench; and an impurity region formed in the semiconductor layer adjacent the gate electrode on one side of the trench, and an impurity region also formed in the semiconductor layer on the other side of the trench.

REFERENCES:
patent: 5235189 (1993-08-01), Hayden et al.
patent: 5340754 (1994-08-01), Witek et al.
patent: 5393681 (1995-02-01), Witek et al.
patent: 5508531 (1996-04-01), Ha
patent: 5527723 (1996-06-01), Witek et al.
patent: 5539238 (1996-07-01), Malhi
patent: 5567958 (1996-10-01), Orlowski et al.
patent: 5627395 (1997-05-01), Witek et al.
patent: 5714394 (1998-02-01), Kadosh et al.
patent: 5736435 (1998-04-01), Venkatesan
patent: 5773871 (1998-06-01), Boyd et al.
patent: 5869847 (1999-02-01), Sin et al.
patent: 5925894 (1999-07-01), Yang
patent: 5932907 (1999-08-01), Grill et al.
Van Zant, Peter, Microchip Fabrication Third Edition, pp.:496-500 and 518-520, 1997.
Wolf, Stanley, Silicon Processing for hte VLSI Era, vol. 1, pp.:365-369, 1986.
Wolf, Stanley "Silicon Processing for the VLSI Era, vol. 2 Process Integration" pp.:51-58, 1990.

Affiliated with

Also associated with

Rating

Method of forming a thin film transistor with asymmetrically arr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a thin film transistor with asymmetrically arr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a thin film transistor with asymmetrically arr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-362305