Method of forming a thin film transistor substrate with a...

Details Method of forming a thin film transistor substrate with a... Method of forming a thin film transistor substrate with a...

2005-05-03

2005-05-03

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S097000, C438S098000, C438S149000, C438S151000, C438S166000, C438S488000, C438S597000, C438S652000, C438S666000

Reexamination Certificate

active

06887744

ABSTRACT:
A thin film transistor substrate including a semiconductor layer having a source region and a drain region, an insulating film and a gate electrode which are formed on the semiconductor layer, an interlayer insulating film which is a film stack with mutually different dielectric constants and which covers the gate electrode, a source region contact hole and a drain region contact hole which are formed on the interlayer insulating film, a pixel electrode connected to the source region through the source region contact hole, a first conductive film connected to the drain region through the drain region contact hole and formed of the same film as that of the pixel electrode, and a second conductive film connected to the drain region through the first conductive film.

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