Method of forming a thin film transistor on a transparent plate

Details Method of forming a thin film transistor on a transparent plate Method of forming a thin film transistor on a transparent plate

2005-03-01

2005-03-01

Chaudhari, Chandra (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000

Reexamination Certificate

active

06861301

ABSTRACT:
A method of forming a thin film transistor on a transparent plate. A silicon layer having an active area is provided. A first ion implantation is performed to form a deeper doped region in the silicon layer. A second ion implantation is performed to form a shallower doped region in part of the silicon layer. A transistor structure is formed on the silicon layer located at the active area. A glass plate is formed on the transistor structures. An annealing process whose temperature is about 200° C.˜600° C. is performed to peel the silicon layer from the deeper doped region and the shallower doped region, and to form a silicon thin film adhered to the transistor structure. Thus, the silicon thin film transistor can be formed on the glass plate without a high temperature process.

REFERENCES:
patent: 5930609 (1999-07-01), Young
patent: 5946585 (1999-08-01), Zhang et al.
patent: 6025607 (2000-02-01), Ohori et al.
patent: 6569718 (2003-05-01), McCulloch et al.

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