Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-10-28
2000-12-12
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
H01L 2184
Patent
active
061597775
ABSTRACT:
An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step.
REFERENCES:
patent: 3667832 (1972-06-01), Kitano et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4309224 (1982-01-01), Shibata
patent: 4370175 (1983-01-01), Levatter
patent: 4379727 (1983-04-01), Hansen et al.
patent: 4436557 (1984-03-01), Wood et al.
patent: 4468855 (1984-09-01), Sasaki
patent: 4473433 (1984-09-01), Bosch et al.
patent: 4475027 (1984-10-01), Pressley
patent: 4484334 (1984-11-01), Pressley
patent: 4500365 (1985-02-01), Mori
patent: 4546009 (1985-10-01), Tiedje et al.
patent: 4646426 (1987-03-01), Sasaki
patent: 4662708 (1987-05-01), Bagdal
patent: 4733944 (1988-03-01), Fahlen et al.
patent: 4851978 (1989-07-01), Ichihara
patent: 4943733 (1990-07-01), Mori et al.
patent: 4970366 (1990-11-01), Imatou et al.
patent: 4997250 (1991-03-01), Ortiz, Jr.
patent: 5097291 (1992-03-01), Suzuki
patent: 5225924 (1993-07-01), Ogawa et al.
patent: 5236865 (1993-08-01), Sandhu et al.
patent: 5263250 (1993-11-01), Nishiwaki et al.
patent: 5304357 (1994-04-01), Sato et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5413958 (1995-05-01), Imahashi et al.
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5432122 (1995-07-01), Chae
patent: 5561081 (1996-10-01), Takenouchi et al.
patent: 5708252 (1998-01-01), Shinohara et al.
T. Hempel, "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924 (no month given), 1993.
H. Kuriyama, "Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method", Jpn. J. Appl. Phys.. vol. 32, No. 12B, pp. 6190-6195 (no month given), 1993.
M. Wagner et al., Appl. Surf. Sci., 43(1989)260 "Formation of p-n junctions and silicides . . . laser beam homogenization system", Dec. 1989.
Y.M. Jhon et al., Jpn.J. Appl. Phys. 33(10B)(Oct. 1994)L1438, "Crystallization . . . line shaped beam having a Gaussain profile".
Full translation of JP 2-73623, Publication Date Mar. 13, 1990.
Full translation of JP 3-286518, Publication Date Dec. 17, 1991.
Full translation of JP 64-76715, Publication Date Mar. 22, 1989.
Sera, Kenji et al., "High-Performance TFT's Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film", IEEE Transactions on Electron Devices, vol., 36, No. 12, Dec. 1989.
"Excimer Laser Annealing Apparatus Leonix", Chapter 2: Active Element Array Forming Technology of Semiconductor World 1993, pp. 196-197 with full translation.
Sameshima, Toshiyuki et al., XeCl Excimer Laser Annealing used to Fabricate Poly-Si TFT's Japanese Journal of Applied Physics, vol. 28, No. 10, Oct., 1989, pp. 1789-1793.
Konuma, T. et al., "P-28: 3.7-in.-Diagonal STN-LCD with Stripe Electrode Patterns Fabricated by an Excimer-Laser Scribing System", SID 93 Digest, pp. 550-553.
Morikawa, Akira et al., "Special Article: Present Situation of Laser Processing Technique--Application of Surface Modification by CO.sub.2 Laser", Toshiba Corporation, Laser Group, Engineering Section, Mechatronics Apparatus Division, pp. 68-69 with full translation.. No Date.
Kaneko, Setsuo, "Excimer Laser Annealed Poly-Crystalline Silicon TFT", T. IEE Japan, vol. 110-A, No. 10, 1990, pp. 679-683 with full translation.
McGrath, Tim, "Applications of Excimer Lasers in Microelectronics", Solid State Technology, Dec. 1983, pp. 165-169.
Pennington, K.S., et al., "CCD Imaging Array Combining Fly's-eye Lens with TDI for Increased Light-Gathering Ability", IBM Technical Disclosure Bulletin, vol. 21, No. 2, Jul. 1978, pp. 857-858.
"Poly-Si By Excimer Laser Annealing With Solidification Process Control", 93/5vol. J76-C-II No. 5, pp. 241-248 from publication entitled "The Transactions of the Institute of Electronics Information and Communication Engineers". No Date.
Pennington, K.S. et al, "CCD Imaging Array Combining Fly's Eye Lens with TDI for Increasing Light-gathering Ability," IBM Technical Disclosure Bulletin, vol. 21 No. 2, Jul. 1978, pp. 857-858.
"Lateral Growth of Poly-Si Films With a Specific Orientation By An Excimer Laser Anneal Method", Jpn. J. Appl. Phys., vol. 32 (1993) Pt. 1 No. 12B, p. 6190.
"Improving the uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant Microelectronics", Jpn. J. Appl. Phys., vol. 31 (1992) pp. 4550-4554, pt. 1, No. 12B, Dec. 1992.
"Enlargement of Poly-Si Film Grain Size By Excimer Laser Annealing And Its Application To High-Performance Poly-Si Thin Film Transistor" Japanese Journal of Applied Physics, vol. 30, No. 12B, Dec., 1991, pp. 3700-3703.
Ohnuma Hideto
Suzuki Atsunori
Takenouchi Akira
Yamazaki Shunpei
Zhang Hongyong
Bowers Charles
Christianson Keith
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method of forming a TFT semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a TFT semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a TFT semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-216034