Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2004-04-29
2010-10-05
Meeks, Timothy (Department: 1715)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S249100, C427S255230
Reexamination Certificate
active
07807233
ABSTRACT:
A method for forming a silicon dioxide cap layer for a carbon hard mask layer for patterning of polysilicon line features having critical dimensions of 50 nm and less is provided. To this end, a low temperature plasma enhanced CVD process is used in which the deposition rate is maintained low to provide improved controllability of the layer thickness and, thus, of the optical characteristics of the silicon dioxide layer.
REFERENCES:
patent: 5462898 (1995-10-01), Chen et al.
patent: 5670298 (1997-09-01), Hur
patent: 5681425 (1997-10-01), Chen
patent: 5759746 (1998-06-01), Azuma et al.
patent: 5998100 (1999-12-01), Azuma et al.
patent: 6028014 (2000-02-01), Sukjarev
patent: 6057226 (2000-05-01), Wong
patent: 6066577 (2000-05-01), Cooney, III et al.
patent: 6406975 (2002-06-01), Lim et al.
patent: 2001/0045655 (2001-11-01), Matsubara
patent: 2002/0086509 (2002-07-01), Park et al.
patent: 2002/0192885 (2002-12-01), Miyasaka
patent: 0 272 140 (1987-12-01), None
patent: 0 517 627 (1992-12-01), None
patent: 08148569 (1996-06-01), None
Liu et al., “Generating Sub-30nm Poly-Silicon Gates Using PECVD Amorphous Carbon as Hardmask and Anti-Reflecting Coating,”Proceedings of SPIE, 5040:841-48, 2003.
Deshmukh and Aydil, “Investigation of low temperature SiO2plasma enhanced chemical vapor deposition,”J. Vac. Sci. Technol., 14-738-43, Mar./Apr. 1996.
Martinet et al., “Deposition of SiO2and TiO2thin films by plasma enhanced chemical vapor deposition for antireflection coating,”Journal of Non-Crystalline Solids, 216:77-82, 1997.
Huy Katja
Romero Karla
Ruelke Hartmut
Gambetta Kelly M
Globalfoundries Inc.
Meeks Timothy
Williams Morgan & Amerson P.C.
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