Method of forming a T-shaped gate

Details Method of forming a T-shaped gate Method of forming a T-shaped gate

1997-09-22

1999-11-09

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438571, 438572, 438576, 438579, H01L 21338

Patent

active

059813199

ABSTRACT:
The specification describes methods for making T-shaped metal gates for Schottky gate devices such as MESFETs and HEMTs. The method uses a bi-level photoresist technique to create a T-shaped feature for the gate structure. The metal gate is evaporated into the photoresist T-shaped feature and a lift-off process is used to remove unwanted metal. The photoresist is the dissolved away leaving the T-shaped gate. An important aspect of the process is the use of a plasma treatment of the first patterned resist level to harden it so that it is unaffected by the subsequent deposition and patterning of the second level resist.

REFERENCES:
patent: 5406099 (1995-04-01), Hiramatsu
patent: 5583063 (1996-12-01), Samoto
patent: 5693548 (1997-12-01), Lee et al.
patent: 5766967 (1998-06-01), Lai et al.
patent: 5776805 (1998-07-01), Kim
patent: 5858824 (1999-01-01), Saitoh
0.25-micron pseudomorphic HEMT's processed with damage-free dry-etch gate recess technology, IEEE Transactions on Electron Devices, vol. 39, No. 12, pp. 2701-2706, Dec. 1992.

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