Method of forming a T-shaped control electrode through an X-ray

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430326, 430967, 437176, 437229, 378 35, G03C 516

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048659525

ABSTRACT:
A positive resist film is formed on the major surface of a semiconductor substrate, to be irradiated with X-rays through an X-ray mask. The X-ray mask is formed by a joined member of an X-ray transmittable substrate and an X-ray absorber, and the X-ray absorber has an opening section of a T shape, in order to change the amount of transmission of the X-rays in desired positions. After the irradiation with the X-rays, the positive resist film is developed to obtain a resist film having an opening section of a desired T shape. A film for providing a control electrode is formed in the opening section of the resist film and the resist film is removed, thereby to form a T-shaped control electrode on the semiconductor substrate.

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