Method of forming a substantially closed void

Details Method of forming a substantially closed void Method of forming a substantially closed void

2008-04-01

2008-04-01

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C438S798000

Reexamination Certificate

active

10923027

ABSTRACT:
To form a substantially closed void between two structures on a substrate, a flowable liquid dielectric material is deposited to fill partially the space between the structures, and a surface is placed to bridge and substantially close the space between the structures. The substrate is then inverted whilst maintaining the bridge and the deposited material is allowed to flow down to be substantially supported by the surface. The material is set in its substantially supported position, and the surface is removed.

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patent: 5763020 (1998-06-01), Yang
patent: 5766982 (1998-06-01), Akram et al.
patent: 6228756 (2001-05-01), Lee
patent: 6531413 (2003-03-01), Hsieh et al.
patent: 6635363 (2003-10-01), Duclos et al.
patent: 2003/0042612 (2003-03-01), Leuschner et al.
patent: 2003/0049914 (2003-03-01), Leuschner et al.

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