Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2006-08-01
2006-08-01
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S172000, C438S574000
Reexamination Certificate
active
07084021
ABSTRACT:
The presently disclosed technology provides a method for forming a structure wherein an electrode, such as a gate, comprising a refractory metal is deposited. The method comprises depositing a plurality of electron sensitive resist layers on the substrate. Several of the resist layers used have properties that allow them to maintain their shape when exposed to the temperatures needed to deposit refractory metals. Using electron beam lithography, several regions are defined in the resist layers that will be removed to create a mold for a gate. By using resist layers which maintain their shape when exposed to the temperatures needed for evaporating a refractory metal, the mold defined in the resist layers will maintain its shape, thereby allowing a gate having a mushroom shape to be formed.
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HRL Laboratories LLC
Ladas & Parry LLP
Lindsay Jr. Walter L.
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