Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-03-28
2010-10-05
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S793000, C438S794000, C438S795000, C438S508000
Reexamination Certificate
active
07807586
ABSTRACT:
A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nitride film to a process gas containing oxygen radicals formed by non-ionizing electromagnetic radiation induced dissociation of an oxygen-containing gas or an oxygen- and nitrogen-containing gas. The method further includes heat-treating the oxygen-embedded silicon nitride film to form a stressed silicon oxynitride film.
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Le Dung A.
Tokyo Electron Limited
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