Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-01-01
2008-01-01
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S197000, C257S369000, C257SE21063
Reexamination Certificate
active
11059956
ABSTRACT:
A method of forming a source/drain having a reduced junction capacitance and a transistor employing the same. In one embodiment, the method of forming the source/drain includes forming a recess in a substrate adjacent a gate of the transistor and forming a deep doped region below a bottom surface of the recess. The method also includes epitaxially growing a semiconductor material within the recess and forming a lightly doped drain region adjacent the gate.
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Lindsay, Jr. Walter L
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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