Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1991-02-19
1997-01-28
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 84, 117937, 505819, C30B 2504
Patent
active
055974112
ABSTRACT:
A method of growing an epitaxial like, single crystal, superconducting film by promoting the epitaxial-like growth of film from a single nucleation site in deference to substantially all other nucleation sites on the substrate. The present invention contemplates the use of a mask to systematically expose sections of the substrate to the deposition apparatus. This mask may include an adjustable or fixed aperture and is manipulated as herein described to systematically expose areas of the substrate to the deposition apparatus.
REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
"Mass-Spectrometer Controlled Coevaporation of Y-Ba-Cu-O Thin Films on Alumina-Substrates", Hudner; Journal of Crystal Growth 91 (1988) pp. 368-372.
Fritzsche Helmut
Ovshinsky Stanford R.
Young Rosa
Breneman R. Bruce
Energy Conversion Devices Inc.
Garrett Felisa
Luddy Marc J.
Schumaker David W.
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