Method of forming a silicon nitride layer on a gate oxide...

Details Method of forming a silicon nitride layer on a gate oxide... Method of forming a silicon nitride layer on a gate oxide...

2008-05-09

2009-12-29

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S769000, C438S770000, C438S778000

Reexamination Certificate

active

07638442

ABSTRACT:
A process for forming a silicon nitride layer on a gate oxide film as part of formation of a gate structure in a semiconductor device includes: forming a layer of silicon nitride on top of a gate oxide film on a semiconductor substrate by a nitridation process, heating the semiconductor substrate in an annealing chamber, exposing the semiconductor substrate to N2in the annealing chamber, and exposing the semiconductor substrate to a mixture of N2and N2O in the annealing chamber.

REFERENCES:
patent: 6245689 (2001-06-01), Hao et al.
patent: 6455389 (2002-09-01), Huang et al.
patent: 6706644 (2004-03-01), Burnham et al.
patent: 6737362 (2004-05-01), Chen et al.
patent: 7053006 (2006-05-01), Hyun et al.
patent: 7078302 (2006-07-01), Ma et al.
patent: 7176094 (2007-02-01), Zhong et al.
patent: 7265065 (2007-09-01), Wang et al.
patent: 2003/0170956 (2003-09-01), Zhong et al.
patent: 2004/0005748 (2004-01-01), Hyun et al.
patent: 2006/0178018 (2006-08-01), Olsen
patent: 2006/0246739 (2006-11-01), Wang et al.
patent: 2007/0093013 (2007-04-01), Chua et al.

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