Method of forming a silicon nitride layer

Details Method of forming a silicon nitride layer Method of forming a silicon nitride layer

1997-08-25

1999-05-25

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438791, 438961, 148DIG169, 117952, 117108, 427595, H01L 2978

Patent

active

059077921

ABSTRACT:
A method of forming a silicon nitride layer or film on a semiconductor wafer structure includes forming a silicon nitride layer on the surface of a wafer structure using a molecular beam of high purity elemental Si and an atomic beam of high purity nitrogen. In a preferred embodiment, a III-V compound semiconductor wafer structure is heated in an ultra high vacuum system to a temperature below the decomposition temperature of said compound semiconductor wafer structure and a silicon nitride layer is formed using a molecular beam of Si provided by either thermal evaporation or electron beam evaporation, and an atomic nitrogen beam provided by either RF or microwave plasma discharge.

REFERENCES:
patent: 4800100 (1989-01-01), Herbots et al.
patent: 4866006 (1989-09-01), Yokoi et al.

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