Method of forming a silicon gate to produce silicon devices with

Details Method of forming a silicon gate to produce silicon devices with Method of forming a silicon gate to produce silicon devices with

1995-12-06

1999-11-09

Wilczewski, Mary

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438595, 438197, H01L 2128

Patent

active

059813644

ABSTRACT:
Disclosed herein is a method of forming a silicon gate stack onto a silicon substrate for a silicon device. The method of forming the silicon gate stack comprises the steps of growing an oxide layer onto the silicon substrate, depositing a thin layer of silicon to form a thin layer of silicon over the oxide layer, depositing a thick layer of silicon over the thin layer of silicon, and introducing impurities into only the thick layer of silicon to form a silicon gate whereby the silicon gate includes the thin layer of silicon and the thick layer of silicon having the impurities. The impurities being introduced with a concentration, the impurities concentration and the thick layer thickness impeding an encroachment by the oxide layer into the silicon gate during application of a protective screen oxide layer around the silicon gate stack.

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