Method of forming a silicide film

Details Method of forming a silicide film Method of forming a silicide film

1988-10-20

1991-01-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437199, 148DIG147, H01L 21283

Patent

active

049835475

ABSTRACT:
In a method of forming a metallic silicide film on a substrate, a metallic silicide film containing silicon at a concentration higher than stoichiometric, is deposited on a substrate. A film of aluminum or aluminum alloy is then deposited on the metallic silicide film. Subsequently, a heat treatment is conducted to cause precipitation of silicon from the metallic silicide film to the aluminum, thereby to lower the silicon concentration in the silicide film.

REFERENCES:
patent: 4332839 (1982-06-01), Levinstein et al.
patent: 4337476 (1982-06-01), Fraser et al.
patent: 4443930 (1984-04-01), Hwang et al.
Cooke, M. J., "A Review of LPCVD . . . ", J. Vac. Sci. and Tech., vol. 35, No. 2, Feb. 1985, pp. 67-73.
Van Gurp et al, "Aluminum-Silicide Reactions I. Diffusion, Compound Formation, and Microstructure", 50 J. Appl. Phys. 6915 (1979).
Hess, D. W., "Plasma Etching . . . ", Solid State Technology, Apr. 1981, pp. 189-194.
Reichelderfer, R. F., "Single Wafer . . . ", Solid State Technology, Apr. 1982, 6 pages.
Murarka, S. P., "Silicides for VLSI Applications", Academic Press, (1983), pp. 46-49, p. 124, pp. 156-167, and pp. 174-177.
Ho, P. S., IBM Technical Disclosure Bulletin, vol. 25, No. 3A, Aug. 1982, pp. 1177-1178.

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