Method of forming a sheet of single crystal semiconductor materi

Details Method of forming a sheet of single crystal semiconductor materi Method of forming a sheet of single crystal semiconductor materi

1979-01-04

1981-06-16

Miles, Tim R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156616R, 156DIG88, 422246, C30B 1108, C30B 2900

Patent

active

042736080

ABSTRACT:
Apparatus for forming thin layers of material such as single crystalline silicon includes a container having a generally cylindrical interior surface. The container is rotatably mounted and movable through a heater. In forming the layer of material, the material is heated in the container to a temperature above the material melting point. The container is rotated whereby the liquid material adheres to the interior surface of the container by centrifugal force. The container is slowly cooled beginning at one end thereof whereby the layer of material solidifies.

REFERENCES:
patent: 2675303 (1954-04-01), Sobek et al.
patent: 2826869 (1958-03-01), Lerch
patent: 2967095 (1961-01-01), Herrick
patent: 2972524 (1961-02-01), Ross
patent: 3183554 (1965-05-01), Brandt
patent: 3197827 (1965-08-01), Haughton et al.
patent: 3914105 (1975-10-01), Pivar
patent: 3944393 (1976-03-01), Schierding et al.

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