Method of forming a shallow junction

Details Method of forming a shallow junction Method of forming a shallow junction

2005-08-30

2005-08-30

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S069000, C117S002000

Reexamination Certificate

active

06936505

ABSTRACT:
A method of forming a shallow junction in a semiconductor substrate is disclosed. The method of one embodiment comprises preamorphizing a first region of a semiconductor substrate to a first depth and implanting recrystallization inhibitors into a second region of the semiconductor substrate. The second region is a part of the first region and has a second depth. Next, a dopant is implanted into a third region of the semiconductor substrate with the third region being a part of the second region and a first annealing is performed to selectively recrystallize the first region that has no recrystallization inhibitors. Next, a second annealing is performed to recrystallize the second region and diffuse the dopant within the second region.

REFERENCES:
patent: 6307232 (2001-10-01), Akiyama et al.
patent: 2004/0188767 (2004-09-01), Weber et al.
Kennedy, E.F., et al., “Influence of16O,12C,14N, and Noble Gases on the Crystallization of Amorphous Si Layers,” Journal of Applied Physics, vol. 48, No. 10, Oct. 1977, pp. 4241-4246.
Murto, Robert, et al., “An Investigation of Species Dependence in Germanium Pre-Amorphized and Laser Thermal Annealed Ultra-Shallow Abrupt Junctions,” IEEE, #0-7803-646207/00, 2000, pp. 182-185.
Suni, I., et al., “Influence of F and Cl on the Recrystallization of Ion-Implanted Amorphous Si,” Journal of Applied Physics, vol. 56, No. 2, Jul. 15, 1984, pp. 273-278.
Talwar, Somit, et al., “Study of Laser Thermal Processing (LTP) to Meet Sub 130 nm Node Shallow Junction Requirements,” IEEE, #0-7803-64620-7/00, 2000, pp. 175-177.
Talwar, Somit, et al., “Ultra-Shallow, Abrupt, and Highly-Activated Junctions by Low-Energy Ion Implantation and Laser Annealing,” IEEE, #0-7803-4538-X/99, 1999, pp. 1171-1174.

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