Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2005-08-16
2005-08-16
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C148S033400, C148S033500
Reexamination Certificate
active
06930026
ABSTRACT:
A Si substrate1with a SiGeC crystal layer8deposited thereon is annealed to form an annealed SiGeC crystal layer10on the Si substrate1. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer7, which is lattice-relieved and hardly has dislocations, and SiC microcrystals6dispersed in the matrix SiGeC crystal layer7. A Si crystal layer is then deposited on the annealed SiGeC crystal layer10, to form a strained Si crystal layer4hardly having dislocations.
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Warren et al. “Thermal stability of Si/Si1-x-yGexCy/Si heterostructures grown by rapid thermal chemical vapor deposition” Journal of Crystal Growth 157, 1995, pp. 414-419.
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Kanzawa Yoshihiko
Kubo Minoru
Nozawa Katsuya
Saitoh Tohru
Kielin Erik
Nixon & Peabody LLP
Studebaker Donald R.
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