Method of forming a semiconductor structure

Details Method of forming a semiconductor structure Method of forming a semiconductor structure

2007-11-19

2010-06-01

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S305000

Reexamination Certificate

active

07727827

ABSTRACT:
A method of forming a semiconductor structure comprises providing a semiconductor substrate. A feature is formed over the substrate. The feature is substantially homogeneous in a lateral direction. A first ion implantation process adapted to introduce first dopant ions into at least one portion of the substrate adjacent the feature is performed. The length of the feature in the lateral direction is reduced. After the reduction of the length of the feature, a second ion implantation process adapted to introduce second dopant ions into at least one portion of the substrate adjacent the feature is performed. The feature may be a gate electrode of a field effect transistor to be formed over the semiconductor substrate.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 015 505.2-33 dated Mar. 18, 2008.
PCT Search Report and Written Opinion from PCT/US2008/004066 dated Jun. 18, 2008.

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