Method of forming a semiconductor strain sensor

Details Method of forming a semiconductor strain sensor Method of forming a semiconductor strain sensor

1994-08-02

1997-04-22

Trinh, Michael

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438385, 438 17, 438 10, H01L 2177

Patent

active

056229011

ABSTRACT:
In a semiconductor strain sensor, for example, using resistors of a polycrystalline semiconductor material such as polycrystalline silicon as strain gauges, the sum of the temperature coefficient of resistance (TCR) of the resistor and the temperature coefficient of strain sensitivity (TCK) is adjusted not by controlling the impurity carrier concentration but by controlling the resistivity, thereby an output fluctuation due to a change in the temperature can be suppressed.

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J. Suski et al., "Polysilicon Soi Pressure Sensor", Sensors and Actuators, 17 (1989) pp. 405-414.

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