Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2006-04-18
2006-04-18
Zarneke, David A. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
Reexamination Certificate
active
07030469
ABSTRACT:
An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer (42, 64) over a mold encapsulant (35, 62). The conductive layer (42, 64) may be electrically coupled using a wire to the leadframe (10, 52) of the semiconductor package (2, 50). The electrical coupling can be performed by wire bonding two device portions (2, 4, 6, 8) of a leadframe (10) together and then cutting the wire bond (32) by forming a groove (40) in the overlying mold encapsulant (35) to form two wires (33). The conductive layer (42) is then electrically coupled to each of the two wires (33). In another embodiment, a looped wire bond (61) is formed on top of a semiconductor die (57). After mold encapsulation, portions of the mold encapsulant (62) are removed to expose portions of the looped wire bond (61). The conductive layer (64) is then formed over the mold encapsulant (62) and the exposed portion of the looped wire bond (61) so that the conductive layer (64) is electrically coupled to the looped wire bond (61).
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Chapman Michael E.
Mahadevan Dave S.
Salian Arvind S.
Freescale Semiconductor Inc.
Vo Kim-Marie
Zarneke David A.
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