Method of forming a semiconductor die with reduced RF...

Details Method of forming a semiconductor die with reduced RF... Method of forming a semiconductor die with reduced RF...

2011-03-08

2011-03-08

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S106000, C438S128000, C438S215000, C438S238000, C438S243000, C257SE21633, C257SE21689

Reexamination Certificate

active

07902013

ABSTRACT:
An electrically floating region is formed in the top surface of a semiconductor wafer to implement a radio frequency (RF) blocking structure. The RF blocking structure lies below the metal pads and traces that carry an RF signal in a metal interconnect structure to substantially reduces the attenuation of the RF signal.

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