Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-01-29
2008-01-29
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21410
Reexamination Certificate
active
07323373
ABSTRACT:
A semiconductor device is formed by patterning a semiconductor layer to create a vertical active region and a horizontal active region, wherein the horizontal active region is adjacent the vertical active region. The semiconductor layer overlies an insulating layer. A spacer is formed adjacent the vertical active region and over a portion of the horizontal active region. At least a portion of the horizontal active region is oxidized to form an isolation region. The spacer is removed. A gate dielectric is formed over the vertical active region after removing the spacer. A gate electrode is formed over the gate dielectric. However, forming the spacer is optional.
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U.S. Appl. No. 10/909,095 filed Jun. 30, 2004.
Kolagunta Venkat
Mathew Leo
Sing David C.
Freescale Semiconductor Inc.
King Robert L.
Lebentritt Michael
Patel Reema
Vo Kim-Marie
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