Method of forming a semiconductor device with a conductor plug i

Details Method of forming a semiconductor device with a conductor plug i Method of forming a semiconductor device with a conductor plug i

1999-03-29

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438624, 257758, H01L 214763

Patent

active

06136696&

ABSTRACT:
A semiconductor device that prevents any problems relating to contact resistance increase at a conductor plug and parasitic resistance increase near the conductor plug. A first patterned conductive layer is formed on a first dielectric layer, and a second patterned dielectric layer is formed on the first patterned conductive layer. A third dielectric layer is formed on the first dielectric layer to cover entirely the first patterned conductive layer and covering partially the second patterned dielectric layer. A fourth patterned dielectric layer is formed on the third dielectric layer to serve as sidewall spacers for the part the second patterned dielectric layer exposed from the third dielectric layer. A fifth dielectric layer is formed on the third dielectric layer. A contact hole is formed to penetrate through at least the fifth and third dielectric layers. A conductive plug is formed to fill the contact hole. A second conductive layer is formed on the fifth dielectric layer to be contacted with the conductive plug. The conductive plug is electrically insulated from the first patterned conductive layer by the third dielectric layer itself in the contact hole. The second conductive layer is electrically connected with the substrate or a conductive layer intervening between the substrate and the third dielectric layer.

REFERENCES:
patent: 5828096 (1998-10-01), Ohno et al.
patent: 5846873 (1998-12-01), Violette et al.
patent: 5847465 (1998-12-01), Liou et al.

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