Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-03
2006-10-03
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S377000, C257S314000, C257S315000, C257SE29170
Reexamination Certificate
active
07115949
ABSTRACT:
In some embodiments, non-volatile memory (NVM) devices are formed on a silicon-on-insulator (SOI) substrate (12) by forming elevated sources and drains (56) in contact with extensions (46) within the top silicon layer (18) of the SOI substrate (12). Buried conductive regions (42) are formed within the top silicon layer (18) below the extensions (46) to mitigate floating body effects that occur when using SOI substrates. In other embodiments, NVM devices are formed using elevated sources and drains (56), extensions (46) and the buried conductive regions (42) in bulk semiconductor substrates. In any embodiment, logic devices may be formed in conjunction with NVM devices, wherein the logic and NVM devices have elevated sources and drains (56), extensions (46) and the buried conductive regions (42).
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PCT 03/15796 International Search Report May 28, 2004.
Chindalore Gowrishankar L.
Hoefler Alexander
Li Chi Nan Brian
Freescale Semiconductor Inc.
Lee Eugene
Vo Kim-Marie
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